X. Blasco, M. Nafría, X. Aymerich. Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO::2:: Gate Oxide on MOS Structures. Microelectronics Reliability, 42(9-11):1513-1516, 2002. [doi]
@article{BlascoNA02,
title = {Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO::2:: Gate Oxide on MOS Structures},
author = {X. Blasco and M. Nafría and X. Aymerich},
year = {2002},
doi = {10.1016/S0026-2714(02)00181-6},
url = {http://dx.doi.org/10.1016/S0026-2714(02)00181-6},
researchr = {https://researchr.org/publication/BlascoNA02},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {42},
number = {9-11},
pages = {1513-1516},
}