Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO::2:: Gate Oxide on MOS Structures

X. Blasco, M. Nafría, X. Aymerich. Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO::2:: Gate Oxide on MOS Structures. Microelectronics Reliability, 42(9-11):1513-1516, 2002. [doi]

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