Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies

A. Bravaix, C. Trapes, D. Goguenheim, N. Revil, E. Vincent. Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. Microelectronics Reliability, 43(8):1241-1246, 2003. [doi]

Abstract

Abstract is missing.