Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND

Laurent Breuil, Mihaela Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, G. Van den bosch, Jan Van Houdt, Maarten Rosmeulen. Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. In IEEE International Memory Workshop, IMW 2023, Monterey, CA, USA, May 21-24, 2023. pages 1-4, IEEE, 2023. [doi]

@inproceedings{BreuilPSARBHR23,
  title = {Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND},
  author = {Laurent Breuil and Mihaela Popovici and J. Stiers and Antonio Arreghini and S. Ramesh and G. Van den bosch and Jan Van Houdt and Maarten Rosmeulen},
  year = {2023},
  doi = {10.1109/IMW56887.2023.10145986},
  url = {https://doi.org/10.1109/IMW56887.2023.10145986},
  researchr = {https://researchr.org/publication/BreuilPSARBHR23},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {IEEE International Memory Workshop, IMW 2023, Monterey, CA, USA, May 21-24, 2023},
  publisher = {IEEE},
  isbn = {978-1-6654-7459-7},
}