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Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND

Laurent Breuil, Mihaela Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, G. Van den bosch, Jan Van Houdt, Maarten Rosmeulen. Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. In IEEE International Memory Workshop, IMW 2023, Monterey, CA, USA, May 21-24, 2023. pages 1-4, IEEE, 2023. [doi]

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