Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast

Marco Buzzo, Mauro Ciappa, Maria Stangoni, Wolfgang Fichtner. Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast. Microelectronics Reliability, 45(9-11):1499-1504, 2005. [doi]

Abstract

Abstract is missing.