Improved empirical DC I-V model for 4H-SiC MESFETs

QuanJun Cao, YiMen Zhang, YuMing Zhang, HongLiang Lv, YueHu Wang, XiaoYan Tang, Hui Guo. Improved empirical DC I-V model for 4H-SiC MESFETs. Science in China Series F: Information Sciences, 51(8):1184-1192, 2008. [doi]

Abstract

Abstract is missing.