Stefania Carapezzi, Susanna Reggiani, Elena Gnani, Antonio Gnudi. On the electron mobility of strained InGaAs channel MOSFETs. In 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, Poland, September 23-26, 2019. pages 266-269, IEEE, 2019. [doi]
Abstract is missing.