Modeling the behavior of amorphous oxide thin film transistors before and after bias stress

Antonio Cerdeira, Magali Estrada, B. S. Soto-Cruz, Benjamín Iñíguez. Modeling the behavior of amorphous oxide thin film transistors before and after bias stress. Microelectronics Reliability, 52(11):2532-2536, 2012. [doi]

Abstract

Abstract is missing.