Analytical model for SRAM dynamic write-ability degradation due to gate oxide breakdown - researchr publication

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Vikas Chandra, Robert C. Aitken. Analytical model for SRAM dynamic write-ability degradation due to gate oxide breakdown. In Design, Automation and Test in Europe, DATE 2011, Grenoble, France, March 14-18, 2011. pages 1172-1175, IEEE, 2011. [doi]

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