A 130 mV SRAM With Expanded Write and Read Margins for Subthreshold Applications

Meng-Fan Chang, Shi-Wei Chang, Po-wei Chou, Wei-Cheng Wu. A 130 mV SRAM With Expanded Write and Read Margins for Subthreshold Applications. J. Solid-State Circuits, 46(2):520-529, 2011. [doi]

Abstract

Abstract is missing.