Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling - researchr publication

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Ying-Yu Chen, Morteza Gholipour, Deming Chen. Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling. In 21st Asia and South Pacific Design Automation Conference, ASP-DAC 2016, Macao, Macao, January 25-28, 2016. pages 761-768, IEEE, 2016. [doi]

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