ESD protection design for the 45-V pLDMOS-SCR (p-n-p-arranged) devices with source-discrete distributions

Shen-Li Chen, Yu-Ting Huang, Chih-Ying Yen, Kuei-Jyun Chen, Yi-Cih Wu, Jia-Ming Lin, Chih-Hung Yang. ESD protection design for the 45-V pLDMOS-SCR (p-n-p-arranged) devices with source-discrete distributions. In IEEE 5th Global Conference on Consumer Electronics, GCCE 2016, Kyoto, Japan, October 11-14, 2016. pages 1-2, IEEE, 2016. [doi]

Abstract

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