Investigation of Si/SiGe/Si heterostructure implanted by H ion and annealed in vacuum and dry O::2:: ambient

Changchun Chen, Jiangfeng Liu, Benhai Yu, Qirun Dai. Investigation of Si/SiGe/Si heterostructure implanted by H ion and annealed in vacuum and dry O::2:: ambient. Microelectronics Journal, 38(6-7):800-804, 2007. [doi]

Abstract

Abstract is missing.