A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS

Cuilin Chen, Tsuyoshi Sugiura, Toshihiko Yoshimasu. A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS. In IEEE Radio and Wireless Symposium, RWS 2019, Orlando, FL, USA, January 20-23, 2019. pages 1-3, IEEE, 2019. [doi]

Abstract

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