Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Bock, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, C. Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer. Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proceedings of the IEEE, 105(6):1035-1050, 2017. [doi]

Abstract

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