A 0.13µm 64Mb multi-layered conductive metal-oxide memory

Christophe J. Chevallier, Chang Hua Siau, Seow Fong Lim, Sri Rama Namala, Misako Matsuoka, Bruce L. Bateman, Darrell Rinerson. A 0.13µm 64Mb multi-layered conductive metal-oxide memory. In IEEE International Solid-State Circuits Conference, ISSCC 2010, Digest of Technical Papers, San Francisco, CA, USA, 7-11 February, 2010. pages 260-261, IEEE, 2010. [doi]

Abstract

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