A new two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs

T. K. Chiang. A new two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs. Microelectronics Reliability, 47(2-3):379-383, 2007. [doi]

Abstract

Abstract is missing.