Effect of the pre-gate oxide cleaning temperature on the reliability of GOI and devices performances in deep submicron CMOS technology - researchr publication

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Y. T. Chiang, Y. K. Fang, Y. J. Huang, T. H. Chou, S. Y. Yeh, C. S. Lin. Effect of the pre-gate oxide cleaning temperature on the reliability of GOI and devices performances in deep submicron CMOS technology. Microelectronics Reliability, 48(11-12):1786-1790, 2008. [doi]

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