Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs

Omar Chihani, Loic Théolier, Jean-Yves Delétage, Eric Woirgard, Omar Chihani, Alain Bensoussan, André Durier. Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 2-1, IEEE, 2018. [doi]

Abstract

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