Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs - researchr publication authors

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Alessandro Chini, F. Soci, Fausto Fantini, A. Nanni, A. Pantellini, Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni. Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs. Microelectronics Reliability, 53(9-11):1461-1465, 2013. [doi]

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