Francesca Chiocchetta, C. Calascione, Carlo De Santi, C. Sharma, Fabiana Rampazzo, Xun Zheng, Brian Romanczyk, Matthew Guidry, H. Li, Stacia Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni. Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. In IEEE International Reliability Physics Symposium, IRPS 2021, Monterey, CA, USA, March 21-25, 2021. pages 1-2, IEEE, 2021. [doi]
Abstract is missing.