GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse

Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, A. Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 11, IEEE, 2022. [doi]

Abstract

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