GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse - researchr publication authors

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Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, A. Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 11, IEEE, 2022. [doi]

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