th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface

Jiho Cho, D. Chris Kang, Jongyeol Park, Sangwan Nam, Jung-Ho Song, Bong-Kil Jung, Jaedoeg Lyu, Hogil Lee, Won-Tae Kim, Hongsoo Jeon, Sunghoon Kim, In-Mo Kim, Jae-Ick Son, Kyoungtae Kang, Sang-Won Shim, Jongchul Park, Eungsuk Lee, Kyung-Min Kang, Sang-Won Park, Jaeyun Lee, Seung-Hyun Moon, Pansuk Kwak, Byunghoon Jeong, Cheon An Lee, Kisung Kim, Junyoung Ko, Tae-Hong Kwon, Junha Lee, Yohan Lee, Chaehoon Kim, Myeong-Woo Lee, Jeong-Yun Yun, Hojun Lee, Yonghyuk Choi, Sanggi Hong, Jonghoon Park, Yoonsung Shin, Hojoon Kim, Hansol Kim, Chiweon Yoon, Dae-Seok Byeon, Seungjae Lee, Jin-yub Lee, Jaihyuk Song. th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface. In IEEE International Solid-State Circuits Conference, ISSCC 2021, San Francisco, CA, USA, February 13-22, 2021. pages 426-428, IEEE, 2021. [doi]

Abstract

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