A 33.6-to-33.8 Gb/s Burst-Mode CDR in 90 nm CMOS Technology

Lan-chou Cho, Chihun Lee, Chao-Ching Hung, Shen-Iuan Liu. A 33.6-to-33.8 Gb/s Burst-Mode CDR in 90 nm CMOS Technology. J. Solid-State Circuits, 44(3):775-783, 2009. [doi]

Abstract

Abstract is missing.