Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs

Nilotpal Choudhury, Uma Sharma, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra. Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-6, IEEE, 2020. [doi]

Abstract

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