Temperature dependent time-to-breakdown (T::BD::) of TiN/HfO::2:: n-channel MOS devices in inversion

N. A. Chowdhury, X. Wang, G. Bersuker, C. Young, N. Rahim, D. Misra. Temperature dependent time-to-breakdown (T::BD::) of TiN/HfO::2:: n-channel MOS devices in inversion. Microelectronics Reliability, 49(5):495-498, 2009. [doi]

Abstract

Abstract is missing.