Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm)

R. Clerc, A. S. Spinelli, G. Ghibaudo, C. Leroux, G. Pananakakis. Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm). Microelectronics Reliability, 41(7):1027-1030, 2001. [doi]

Abstract

Abstract is missing.