Physical model for GaN HEMT design optimization in high frequency switching applications

D. Cucak, Miroslav Vasic, O. Garcia, Yves Bouvier, J. Oliver, Pedro Alou, J. A. Cobos, A. Wang, S. Martin-Horcajo, F. Romero, F. Calle. Physical model for GaN HEMT design optimization in high frequency switching applications. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 393-396, IEEE, 2014. [doi]

Abstract

Abstract is missing.