On the temperature dependence of subthreshold currents in MOS electron inversion layers, revisited

Brian P. Degnan, Jennifer Hasler. On the temperature dependence of subthreshold currents in MOS electron inversion layers, revisited. In IEEE International Symposium on Circuits and Systems, ISCAS 2016, Montréal, QC, Canada, May 22-25, 2016. pages 2074-2077, IEEE, 2016. [doi]

Abstract

Abstract is missing.