An overview of hot-carrier induced degradation in 0.25 mum Partially and Fully Depleted SOI N-MOSFET s - researchr publication related

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F. Dieudonné, F. Daugé, J. Jomaah, C. Raynaud, F. Balestra. An overview of hot-carrier induced degradation in 0.25 mum Partially and Fully Depleted SOI N-MOSFET s. Microelectronics Reliability, 41(9-10):1417-1420, 2001.

The following publications are possibly variants of this publication:

Low frequency noise in 0.12 mum partially and fully depleted SOI technologyFrançois Dieudonné, Sébastien Haendler, Jalal Jomaah, Francis Balestra. mr, 43(2):243-248, 2003. [doi]

Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETsM. A. Exarchos, G. J. Papaioannou, Jalal Jomaah, Francis Balestra. mr, 49(9-11):1018-1023, 2009. [doi]

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