Influence of post-annealing on the mechanical and electrical properties of boron-doped nanocrystalline silicon thin films

J. N. Ding, H. S. Qi, N. Y. Yuan, Y. L. He, G. G. Cheng. Influence of post-annealing on the mechanical and electrical properties of boron-doped nanocrystalline silicon thin films. In 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2009, Shenzhen, China, January 5-8, 2009. pages 413-415, IEEE, 2009. [doi]

Abstract

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