Experimental and numerical results correlation during extreme use of power MOSFET designed for avalanche functional mode

L. Dupont, J. L. Blanchard, R. Lallemand, G. Coquery, Jean-Michel Morelle, G. Blondel, B. Rouleau. Experimental and numerical results correlation during extreme use of power MOSFET designed for avalanche functional mode. Microelectronics Reliability, 50(9-11):1804-1809, 2010. [doi]

Abstract

Abstract is missing.