A high temperature variable gain amplifier based on GaN HEMT devices for downhole communications

Mohammed Ehteshamuddin, Jebreel M. Salem, Dong Sam Ha. A high temperature variable gain amplifier based on GaN HEMT devices for downhole communications. In IEEE International Symposium on Circuits and Systems, ISCAS 2017, Baltimore, MD, USA, May 28-31, 2017. pages 1-4, IEEE, 2017. [doi]

Abstract

Abstract is missing.