A high temperature variable gain amplifier based on GaN HEMT devices for downhole communications - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Mohammed Ehteshamuddin, Jebreel M. Salem, Dong Sam Ha. A high temperature variable gain amplifier based on GaN HEMT devices for downhole communications. In IEEE International Symposium on Circuits and Systems, ISCAS 2017, Baltimore, MD, USA, May 28-31, 2017. pages 1-4, IEEE, 2017. [doi]

This author has not been identified. Look up 'Mohammed Ehteshamuddin' in GoogleThis author has not been identified. Look up 'Jebreel M. Salem' in GoogleThis author has not been identified. Look up 'Dong Sam Ha' in Google

runs on WebDSL