On the defects introduced by AC and DC hot carrier stress in SOI PD MOSFETs - researchr publication related

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M. A. Exarchos, François Dieudonné, Jalal Jomaah, G. J. Papaioannou, Francis Balestra. On the defects introduced by AC and DC hot carrier stress in SOI PD MOSFETs. Microelectronics Reliability, 44(9-11):1643-1647, 2004. [doi]

The following publications are possibly variants of this publication:

Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETsM. A. Exarchos, G. J. Papaioannou, Jalal Jomaah, Francis Balestra. mr, 49(9-11):1018-1023, 2009. [doi]

An overview of hot-carrier induced degradation in 0.25 mum Partially and Fully Depleted SOI N-MOSFET sF. Dieudonné, F. Daugé, J. Jomaah, C. Raynaud, F. Balestra. mr, 41(9-10):1417-1420, 2001.

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