Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors

M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter. Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors. In Proceedings of the 2000 7th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2000, Jounieh, Lebanon, December 17-20, 2000. pages 940-943, IEEE, 2000. [doi]

@inproceedings{FadlallahGJZ00,
  title = {Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors},
  author = {M. Fadlallah and Gérard Ghibaudo and Jalal Jomaah and M. Zoaeter},
  year = {2000},
  doi = {10.1109/ICECS.2000.913031},
  url = {https://doi.org/10.1109/ICECS.2000.913031},
  researchr = {https://researchr.org/publication/FadlallahGJZ00},
  cites = {0},
  citedby = {0},
  pages = {940-943},
  booktitle = {Proceedings of the 2000 7th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2000, Jounieh, Lebanon, December 17-20, 2000},
  publisher = {IEEE},
  isbn = {0-7803-6542-9},
}