M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, J. Jomaah, G. Ghibaudo. Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta::2::O::5:: as gate dielectrics. Microelectronics Reliability, 41(9-10):1361-1366, 2001.
@article{FadlallahSGCMDJG01,
title = {Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta::2::O::5:: as gate dielectrics},
author = {M. Fadlallah and A. Szewczyk and C. Giannakopoulos and B. Cretu and F. Monsieur and T. Devoivre and J. Jomaah and G. Ghibaudo},
year = {2001},
tags = {C++, reliability},
researchr = {https://researchr.org/publication/FadlallahSGCMDJG01},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {41},
number = {9-10},
pages = {1361-1366},
}