Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta::2::O::5:: as gate dielectrics

M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, J. Jomaah, G. Ghibaudo. Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta::2::O::5:: as gate dielectrics. Microelectronics Reliability, 41(9-10):1361-1366, 2001.

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