ESD Immunity Impacts of the Drain-Side Heterojunction Device Addition in HV 60 V n/pLDMOS Devices

Sheng-Kai Fan, Shen-Li Chen, Yu-Lin Jhou, Pei-Lin Wu, Po-Lin Lin. ESD Immunity Impacts of the Drain-Side Heterojunction Device Addition in HV 60 V n/pLDMOS Devices. In IEEE 8th Global Conference on Consumer Electronics, GCCE 2019, Osaka, Japan, October 15-18, 2019. pages 81-82, IEEE, 2019. [doi]

Abstract

Abstract is missing.