Yihao Fang, Hsin-Ying Tseng, Mark J. W. Rodwell. $W_{e}=100\mathrm{nm}$ InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting $1\Omega-\mu\mathrm{m}^{2}$ Base Contact Resistivity. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 179-180, IEEE, 2019. [doi]
@inproceedings{FangTR19,
title = {$W_{e}=100\mathrm{nm}$ InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting $1\Omega-\mu\mathrm{m}^{2}$ Base Contact Resistivity},
author = {Yihao Fang and Hsin-Ying Tseng and Mark J. W. Rodwell},
year = {2019},
doi = {10.1109/DRC46940.2019.9046400},
url = {https://doi.org/10.1109/DRC46940.2019.9046400},
researchr = {https://researchr.org/publication/FangTR19},
cites = {0},
citedby = {0},
pages = {179-180},
booktitle = {Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019},
publisher = {IEEE},
isbn = {978-1-7281-2112-3},
}