D. Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 20-1, IEEE, 2022. [doi]
@inproceedings{FaveroSMGBBYDMZ22,
title = {Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs},
author = {D. Favero and Carlo De Santi and Kalparupa Mukherjee and Karen Geens and Matteo Borga and Benoit Bakeroot and Shuzhen You and Stefaan Decoutere and Gaudenzio Meneghesso and Enrico Zanoni and Matteo Meneghini},
year = {2022},
doi = {10.1109/IRPS48227.2022.9764600},
url = {https://doi.org/10.1109/IRPS48227.2022.9764600},
researchr = {https://researchr.org/publication/FaveroSMGBBYDMZ22},
cites = {0},
citedby = {0},
pages = {20},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022},
publisher = {IEEE},
isbn = {978-1-6654-7950-9},
}