Comparison of variability of HCI induced drift for SiON and HKMG devices

X. Federspiel, C. Diouf, F. Cacho, E. Vincent. Comparison of variability of HCI induced drift for SiON and HKMG devices. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-5, IEEE, 2020. [doi]

Abstract

Abstract is missing.