X. Federspiel, C. Diouf, F. Cacho, E. Vincent. Comparison of variability of HCI induced drift for SiON and HKMG devices. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-5, IEEE, 2020. [doi]
@inproceedings{FederspielDCV20,
title = {Comparison of variability of HCI induced drift for SiON and HKMG devices},
author = {X. Federspiel and C. Diouf and F. Cacho and E. Vincent},
year = {2020},
doi = {10.1109/IRPS45951.2020.9128326},
url = {https://doi.org/10.1109/IRPS45951.2020.9128326},
researchr = {https://researchr.org/publication/FederspielDCV20},
cites = {0},
citedby = {0},
pages = {1-5},
booktitle = {2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020},
publisher = {IEEE},
isbn = {978-1-7281-3199-3},
}