Impact of nitrogen incorporation on interface states in (100)Si/HfO::2::

Y. G. Fedorenko, L. Truong, V. V. Afanasev, A. Stesmans, Z. Zhang, Stephen A. Campbell. Impact of nitrogen incorporation on interface states in (100)Si/HfO::2::. Microelectronics Reliability, 45(5-6):802-805, 2005. [doi]

Abstract

Abstract is missing.