High temperature VCO based on GaN devices for downhole communications - researchr publication authors

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Tianming Feng, Jebreel M. Salem, Dong Sam Ha. High temperature VCO based on GaN devices for downhole communications. In IEEE International Symposium on Circuits and Systems, ISCAS 2017, Baltimore, MD, USA, May 28-31, 2017. pages 1-4, IEEE, 2017. [doi]

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