High temperature VCO based on GaN devices for downhole communications

Tianming Feng, Jebreel M. Salem, Dong Sam Ha. High temperature VCO based on GaN devices for downhole communications. In IEEE International Symposium on Circuits and Systems, ISCAS 2017, Baltimore, MD, USA, May 28-31, 2017. pages 1-4, IEEE, 2017. [doi]

References

No references recorded for this publication.

Cited by

No citations of this publication recorded.