R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich. Influence of oxide breakdown position and device aspect ratio on MOSFET s output characteristics. Microelectronics Reliability, 45(5-6):861-864, 2005. [doi]
@article{FernandezRNA05,
title = {Influence of oxide breakdown position and device aspect ratio on MOSFET s output characteristics},
author = {R. Fernández and R. Rodríguez and M. Nafría and X. Aymerich},
year = {2005},
doi = {10.1016/j.microrel.2004.10.029},
url = {http://dx.doi.org/10.1016/j.microrel.2004.10.029},
researchr = {https://researchr.org/publication/FernandezRNA05},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {45},
number = {5-6},
pages = {861-864},
}