Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold - researchr publication

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Guillermo Indalecio Fernández, Natalia Seoane, Manuel Aldegunde, Karol Kalna, Antonio J. García-Loureiro. Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold. J. Low Power Electronics, 11(2):256-262, 2015. [doi]

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